EMRFD Message Archive 598
Message Date From Subject 598 2007-04-05 06:06:00 Ed Almos Input Capacitance of Large MOSFETs I am considering the use of two IRF740B devices in the final of an HF
power amplifier. Normally this would not be a problem but examination
of the datasheet shows device input capacitance as 1400 pF. This is
not good, especially on the bands above 14MHz.
Suggestions concerning how I should deal with this problem would be
appreciated.
Edward Almos HA6SST599 2007-04-05 06:14:07 DSNman@comcast.ne... Re: Input Capacitance of Large MOSFETs Attachments :Ed,
That capacitance would suggest that the devices may not good for a very high frequency.
--
Loren Moline
WA7SKT
-------------- Original message ----------------------
From: "Ed Almos" <edwardalmos@gmail.com>
> I am considering the use of two IRF740B devices in the final of an HF
> power amplifier. Normally this would not be a problem but examination
> of the datasheet shows device input capacitance as 1400 pF. This is
> not good, especially on the bands above 14MHz.
>
> Suggestions concerning how I should deal with this problem would be
> appreciated.
>
> Edward Almos HA6SST
>
>601 2007-04-05 07:05:06 Shawn Upton Re: Input Capacitance of Large MOSFETs Be careful. The input capacitance is not linear--it
changes as the FET goes from off to on hard. Might
not be an issue for a linear amp though.
If this is for a linear amp, look further into the
datasheet; there should be a plot showing gate charge
versus Vgs. It will have a linear ramp for the FET
being off and then Ids ramping up, then a flat spot as
Vds ramps down, and then a different curve for the FET
on hard. For grounded source, use the flat spot to
calculate input capacitance.
For a class C or similar, think of having to move that
total gate charge onto and off of the gate for each
cycle. You could translate that into a capacitance
for required gate drive; I'm not sure if that's what
the "capacitance" that the datasheet refers to or not.
Shawn kb1ckt
604 2007-04-05 08:16:21 Graham Haddock Re: Input Capacitance of Large MOSFETs Ed:
I would use a real RF power transistor rather than a low frequency
power switch in an RF Power amplifier, if you are planning to
go above 10 MHz or so. This is a good example of the difference
between a switching transistor and an RF Power transistor.
For single band PA operation, you can series resonate the gate
capacitance of a switch and make it work, but very difficult to deal
with in a multi band amplifier.
I would recommend that you look at the Mitsubishi "RD Series" of RF
power transistors. They have 16 watt RF output devices
for under USD $5.00. (RD16HHF1)
They are very rugged and easy to design with.
http://www.rfparts.com/mitstran.html
607 2007-04-05 11:53:47 Allison Parent Re: Input Capacitance of Large MOSFETs 612 2007-04-05 16:36:00 arv evans Re: Input Capacitance of Large MOSFETs Ed - HA6SST
This URL may provide some ideas about how to do it:
http://www.arrl.org/qex/2006/09/qx9ohsawa.pdf
Arv - K7HKL
Ed Almos wrote:I am considering the use of two IRF740B devices in the final of an HF
power amplifier. Normally this would not be a problem but examination
of the datasheet shows device input capacitance as 1400 pF. This is
not good, especially on the bands above 14MHz.
Suggestions concerning how I should deal with this problem would be
appreciated.
Edward Almos HA6SST
614 2007-04-06 00:33:50 Ed Almos Thanks Arv - K7HKL The link you supplied was most useful.
It appears that the best way to deal with the large gate capacitance
is to use a very low impedance input. I have not figured out the
reason for the large capacitors across the input but the power MOSFETs
are not expensive, if a few die for the cause during experiments then
this is not a problem.
Edward Almos HA6SST